Abstract:Researches on the electrostatic discharge (ESD) performance of drain-extended NMOS (DeNMOS) under the state-of-the-art 28 nm and 40 nm bulk CMOS process are performed in this paper. Three distinguishing phases of avalanche breakdown stage, depletion region push-out stage and parasitic NPN turn on stage of the gate-grounded DeNMOS (GG-DeNMOS) fabricated under 28 nm CMOS process measured with transmission line pulsing (TLP) test are analyzed through TCAD simulations and tape-out silicon verification detailedly. Damage mechanisms and failure spots of GG-DeNMOS under both CMOS processes are thermal breakdown of drain junction. Improvements based on the basic structure adjustments can increase the GG-DeNMOS robustness from original 2.87 mA/mu m to the highest 5.41 mA/mu m. Under 40 nm process, parameter adjustments based on the basic structure have no significant benefits on the robustness improvements. By inserting P+ segments in the N+ implantation of drain or an entire P+ strip between the N+ implantation of drain and polysilicon gate to form the typical DeMOS-SCR (silicon-controlled rectifier) structure, the ESD robustness can be enhanced from 1.83 mA/mu m to 8.79 mA/mu m and 29.78 mA/mu m, respectively. (C) 2015 Elsevier Ltd. All rights reserved.

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

An Overview of ESD Protection in Nanometer IC

Ggnmos As Esd Protection in Different Nanometer Cmos Process

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

ESD Protection of NMOS Device at Different Gate Bias

Nano enabled 3D integration of on-chip ESD protection for ICs

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection