Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

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Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

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Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

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Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

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A Novel Double RESURF LDMOS with Optimized ESD Robustness

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A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

ESD Performance of LDMOS with Source-Bulk Layout Structure Optimization

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Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

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ESD-Performance Enhancement of Circular Ultra-High-Voltage 300-V N-Channel Lateral-Diffused MOSFETs by Source/Drain Embedded Schottky Diodes

ESD Protection of NMOS Device at Different Gate Bias

A reduced surface current LDMOS with stronger ESD robustness