Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

Impact of Guard Ring Layout Structure on the Voltage-Tolerance Capacity of ESD Protection Devices

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Layout Optimization of Ggiscr Structure for On-Chip System Level Esd Protection Applications

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

A Modified LDMOS Device with Improved ESD Protection Performance

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

Segmented SCR for High Voltage ESD Protection

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Trigger voltage walk-in effect of ESD protection device in HVCMOS

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Analysis Of Metal Routing Technique In A Novel Dual Direction Multi-Finger Scr Esd Protection Device

ESD protection design of DDSCR structure based on the 0.5 BCD process

Improved LDMOS for ESD Protection of High Voltage BCD Process

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology