Abstract:A embedded multi-finger laterally diffused metal oxide semiconductor silicon-controlled rectifier (LDMOS-SCR) structural devices with different types of guard ring layout were designed and fabricated in a CSMC 0.5 μm bipolar-CMOS-DMOS (BCD) process.And the transmission line pulse (TLP) testing was used to compare the vohage-tolerance capacity of these electrostatic discharge (ESD) protection devices.Based on the LDMOS-SCR structure,16,8,4 and 2 fingers were surrounded by guard rings,then four different guard ring layout structures were grouped.The turn-on condition of the multi-finger devices was analyzed by the direct-current simulation device,and the voltage-tolerance capacity of different guard ring layout structures were compared with the TLP testing.Simulation and test results show that the secondary breakdown current of three optimized types of layout structures are higher than that of the conventional one.The type whose eight fingers are surrounded by one guard ring provides 76.36％ inprovement of the secondary breakdown current,and has the strongest robustness per unit area.These devices can provide a reference structure and method for the design of highest voltage-tolerance ESD protection devices in the corresponding process.

Layout Optimization of Ggiscr Structure for On-Chip System Level Esd Protection Applications

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Impact of Guard Ring Layout Structure on the Voltage-Tolerance Capacity of ESD Protection Devices

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

Investigation on the Layout Strategy of Gg NMOS ESD Protection Devices for Uniform Conduction Behavior and Optimal Width Scaling

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

A novel multi-finger layout strategy for GGnMOS ESD protection device

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

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ESD protection design of DDSCR structure based on the 0.5 BCD process

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

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A Novel ESD Protection Structure for Output Pads

Analysis Of Metal Routing Technique In A Novel Dual Direction Multi-Finger Scr Esd Protection Device

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device