Abstract:Layout strategies including source edge to substrate space (SESS) and inserted substrate-pick stripes of gate-grounded NMOS (ggNMOS) are optimized in this work for on-chip electrostatic discharge (ESD) protection. In order to fully investigate influences of substrate resistors on triggering and conduction behaviors of ggNMOS, various devices are designed and fabricated in a 65-nm CMOS process. Direct current (DC), transmission-line-pulsing (TLP), human body model (HBM) and very-fast TLP (VF-TLP) tests are executed to fully characterize performance of fabricated ggNMOS. Test results reveal that an enlarged SESS parameter results in an earlier triggering behavior of ggNMOS, which presents a layout option for subtle adjustable triggering behaviors. Besides, inserted substrate-pick stripes are proved to have a bell-shape influence on the ESD robustness of ggNMOS and this bell-shape influence is valid in TLP, HBM and VF-TLP tests. Moreover, the most ESD-robust ggNMOS optimized under different inserted substrate-pick stripes always achieves a higher HBM level over the traditional ggNMOS at each concerned total device-width. Physical mechanisms of test results will be deeply discussed in this work.

A novel multi-finger layout strategy for GGnMOS ESD protection device

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Design Analysis of Novel Substrate-Triggered GGNMOS in 65nm CMOS Process

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Investigation on the Layout Strategy of Gg NMOS ESD Protection Devices for Uniform Conduction Behavior and Optimal Width Scaling

Layout Optimization of Ggiscr Structure for On-Chip System Level Esd Protection Applications

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Substrate-Triggered Ggnmos in 65 Nm Cmos Process for Esd Application

Increasing Substrate Resistance to Improve the Turn-on Uniformity of a High-Voltage Multi-Finger GG-nLDMOS

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Ggnmos As Esd Protection in Different Nanometer Cmos Process

A Novel Bg-Triggered Ggnmos Structure For Fd-Soi Esd Protection

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Novel Gate-Grounded NMOS Triggered Device Structures for FD-SOI ESD Protection

A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

A novel gate-suppression technique for ESD protection.

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

Analysis Of Metal Routing Technique In A Novel Dual Direction Multi-Finger Scr Esd Protection Device