Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

Design Analysis of Novel Substrate-Triggered GGNMOS in 65nm CMOS Process

Substrate-Triggered Ggnmos in 65 Nm Cmos Process for Esd Application

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Novel Gate-Grounded NMOS Triggered Device Structures for FD-SOI ESD Protection

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

A Novel Bg-Triggered Ggnmos Structure For Fd-Soi Esd Protection

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Trigger voltage walk-out phenomenon in SOI lateral insulated gate bipolar transistor under repetitive electrostatic discharge stresses

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

ESD Protection of NMOS Device at Different Gate Bias

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A Novel Diode String Triggered Gated-Pin Junction Device for Electrostatic Discharge Protection in 65-Nm Cmos Technology