Abstract:In this work, quantum ballistic transport study of a Si double-gate pMOSFET has been carried out in an ultra-thin structure. The simulation is performed by using non-equilibrium Green's function (NEGF) solver that incorporates six band k . p model. Based on this framework, we analyze the device characteristics for a channel length of 5 nm considering different transport directions, confinement directions and channel thickness. In the on and off state of the device several physical parameters are necessary for performance analysis including threshold voltage, subthreshold slope, on/off current ratio. Our results confirm that for 5nm gate length, best electrical performance is obtained at (001)/[100] crystal orientation. It is observed that better ON current, subthreshold swing and lower value of tunneling ratio can be achieved by optimizing the channel thicknesses and selecting the proper crystallographic orientation for the device. The I-ON/I-OFF ratio is also calculated for both high performance and low operating power applications. We find that large channel thickness leads to worse sub-threshold slope due to the stronger source-to-drain tunneling caused by electrostatics degradation. The potential barrier and spectral current density are also presented in order to find the source-to-drain tunneling and ratio for different crystal orientations and body thickness.

Design Analysis of Novel Substrate-Triggered GGNMOS in 65nm CMOS Process

Substrate-Triggered Ggnmos in 65 Nm Cmos Process for Esd Application

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

Ggnmos As Esd Protection in Different Nanometer Cmos Process

High Holding Voltage SCR-LDMOS Stacking Structure with Ring-Resistance-Triggered Technique

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Novel Gate-Grounded NMOS Triggered Device Structures for FD-SOI ESD Protection

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

A Novel Bg-Triggered Ggnmos Structure For Fd-Soi Esd Protection

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A novel multi-finger layout strategy for GGnMOS ESD protection device

Increasing Substrate Resistance to Improve the Turn-on Uniformity of a High-Voltage Multi-Finger GG-nLDMOS

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

Novel Substrate Trigger SCR-LDMOS Stacking Structure for High-Voltage ESD Protection Application

Investigation on the Layout Strategy of Gg NMOS ESD Protection Devices for Uniform Conduction Behavior and Optimal Width Scaling