Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

Investigation on the Layout Strategy of Gg NMOS ESD Protection Devices for Uniform Conduction Behavior and Optimal Width Scaling

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Layout Optimization of Ggiscr Structure for On-Chip System Level Esd Protection Applications

Design Analysis of Novel Substrate-Triggered GGNMOS in 65nm CMOS Process

A novel multi-finger layout strategy for GGnMOS ESD protection device

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

ESD Protection of NMOS Device at Different Gate Bias

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

Analysis of the influence of contact position to the ESD protection ability in Ggnmos device

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process