Abstract:A detailed numerical study on Ge and Si ultrathin-body (UTB) p-type double-gate MOSFET (pDG-FET) is carried out with the help of in-house developed non-equilibrium Green's function (NEGF) simulator employing the six-band k·p model. Six typical confinement/transport crystal orientation configurations and three recent technology nodes are taken into account for better evaluation of device performance. The ballistic velocity and effective mass (m <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) are investigated and compared in detail between 3nm-thick Ge and Si films, with a better understanding of crystal orientation effect obtained. Device performance metrics, such as the ballistic ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) and subthreshold swing (SS), are also extracted and compared. With the source-to-drain tunneling (SDT) effect characterized, further numerical analysis indicates that Ge device suffers from more terrible SDT than Si device at all the considered channel lengths. As the physics behind is clarified, some expectations and suggestions for improving device performance, especially for Ge case, are addressed in the end.

Analysis of the influence of contact position to the ESD protection ability in Ggnmos device

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Investigation on the Layout Strategy of Gg NMOS ESD Protection Devices for Uniform Conduction Behavior and Optimal Width Scaling

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Analysis on the Positive Dependence of Channel Length on Esd Failure Current of A Ggnmos in A 5 V Cmos

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A novel multi-finger layout strategy for GGnMOS ESD protection device

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

ESD Protection of NMOS Device at Different Gate Bias

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Investigation of Problems in JEDEC HBM ESD Test Standard

Layout Optimization of Ggiscr Structure for On-Chip System Level Esd Protection Applications