Abstract:In this work, a novel GaN electrostatic discharge (ESD) protection clamp is proposed for enhancing the gate structure's ESD reliability of the conventional (Con.) p-GaN high-electron-mobility transistor (HEMT). The proposed clamp features a floating p-GaN structure and a pF-grade capacitor, which is in parallel connection between the anode electrode and the floating p-GaN structure (C-GA). It is demonstrated that the proposed clamp not only possesses a low triggering voltage(V-t < 10 V) but also can withstand a relatively high second breakdown current (I-s similar to 6 A) in the transient ESD event. Hence, the proposed clamp can usefully discharge the transient electrostatic charges accumulated at the gate structure of the Con. E-mode p-GaN HEMT and clamp its potential at a low value, thereby enhancing its ESD reliability and avoiding the gate-to-source ESD damage. It is also found that the clamp's V-t and I-s have a strong correlation with C-GA. Thus, through changing C-GA, the clamp will possess the desired V-t and I-s's. In addition, the proposed clamp can be fabricated on the Con. E-mode p-GaN HEMT platform, making the HEMT's ESD design more convenient.

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