Abstract:REFERENCES field-and power-dependent HEMTs," IEEE Trans. Elec2830-2836, Sep. 2015, doi: Shrivastava, "ESD reliability of Trans. Electron Devices, vol. 66, 10.1109/TED.2019.2926781. Javorka, and P. Kordo & scaron;, AlGaN/GaN high-electron-mobility 22, pp. 4655-4657, Dec. 2003, discharge (ESD) behavior of pSymp. Power Semiconductor Sep. 2020, pp. 317-320, doi: Testing Human Body Model State Technology Association, 2007. [19] al., gate protection clamp HEMT," IEEE Trans. Electron Devices, vol. 69, no. 7, pp. 3648-3653, Jul. 2022, doi: 10.1109/TED.2022.3172057. [20] Team EPC. (Feb. 2022). eGaN FET Datasheet (EPC2036-Enhancement Mode Power Transistor). Efficient Power Conversion Corporation, California, USA, Product data sheet of EPC2036. [Online]. Available: https://epcco.com/epc/Portals/0/epc/documents/datasheets/EPC2 036_datasheet.pdf [21] A. Amerasekera and C. Duvvury, ESD in Silicon Integrated 2nd ed. Hoboken, NJ, USA: Wiley, 2002. [22] Team GaN Systems. (2009). GS66516T, Top-Side Cooled 650 Mode GaN Transistor, Datasheet. GaN Systems, Ottawa, ON, Product data sheet of GS66516T. [Online]. Available: https://gansystems. com/wp-content/uploads/2021/10/GS66516T-DS-Rev-210727.pdf [23] Team GaN Systems. (2009). GS66508T, Top-Side Cooled 650 Mode GaN Transistor, Datasheet. GaN Systems, Ottawa, ON, Product data sheet of GS66508T. [Online]. Available: https://gansystems. com/wp-content/uploads/2020/04/GS66508T-DS-Rev-200402.pdf [24] B. Baliga, Fundamentals of Power Semiconductor Devices, New York, NY, USA: Springer, 2008.

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