Abstract:With the continuous improvement of the power density and operating frequency in power conversion systems, it is necessary to develop the new power electronic products with better performances than the conventional semiconductors. As a typical representative of the wide-bandgap semiconductors, gallium nitride (GaN)-based heterostructure has unique high-density two-dimensional electron gas (2DEG) and hence can be used to fabricate the fast high electron mobility transistors (HEMTs) with low power loss. Therefore, they are considered as a promising candidate for the next-generation power devices to improve the switching efficiency and speed. Compared with the depletion mode (D-mode, also known as normally-on) devices, the enhancement-mode (E-mode, also known as normally-off) devices have the advantages of safety, energy-saving, and better circuit topology design, making them more attractive for industry applications. In this paper, the different structure schemes and fabrication technologies of the GaN-based E-mode HEMTs are reviewed and summarized. Their technical characteristics are systematically compared. The influences of material epitaxial structure, ohmic contact, material etching, field plate design, and passivation process on the device performances are discussed in detail wherein the fabrication process of the recessed-gate MIS-HEMTs are emphatically illustrated, focusing on the interface treatment technology and dielectric engineering. In addition, the complicated reliability issues and physical mechanisms in the E-mode HEMTs induced by high temperature, high voltage, and high frequency switching are introduced and discussed. Finally, the potential technical solutions are proposed and the future application fields of GaN-based E-mode HEMTs are prospected.

The ESD Behavior of D-Mode GaN MIS-HEMT

ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Investigation of Problems in JEDEC HBM ESD Test Standard

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Stress Reliability Study of GaN HEMT Devices

Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

Progress of GaN-Based E-mode HEMTs