Abstract:Enhancement-mode (E-mode) GaN MOS-HEMTs using recess process typically face the challenge of precise thickness control, surface roughness issue, and interface traps, all of which could lead to the degradation of the device performance and cause reliability issues. In this article, we use a combined process of atomic layer etching (ALE) technique and atomic layer deposited (ALD) HfSiO dielectric. ALE is repeated oxidation and dry etching process with minimal surface damage, leading to a precisely controlled low-damage recess channel area. The fabricated AlGaN/GaN MOS-HEMTs exhibit E-mode operation with a positive threshold voltage (V-th) of +2.1 V with small V-th dispersion for different devices, an ultrahigh drain current ON-OFF ratio over 1010 and a low ON-resistance (R-ON) of 11.5 Omega . mm at gate-to-drain length (L-GD) of 25 mu m. Source field plate (SFP) structure is employed to reduce the charge trapping process and improve the reliability at high voltages. The current collapse of the E-mode device with SFP structure can be effectively suppressed due to the optimized redistribution of the peak electric field in the gate-to-drain access region, where a significantly improved dynamic R-ON of only 1.17 times increase from the static R-ON after OFF-state V-DS stress of 600 V. Moreover, the enhanced vertical electric field with decreased AlGaN barrier thickness and the positive shift in threshold voltage for the E-mode device can effectively suppress the current collapse, which outperforms the depletion-mode counterpart. The breakdown voltage reaches a considerable value of 1560 V at an OFF-state current density of 1 mu A/mm.

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Impact of Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Device Model and Energy Loss Mechanism of Enhancement-Mode P-Gan HEMTs under Unclamped-Inductive-Switching Stress

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment

Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Optimized Transport Properties of GaN MISHEMTs with Thin AlN Interlayer

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT