Abstract:Surge-energy robustness is essential for power devices in many applications such as automotive powertrains and electricity grids. While Si and SiC mosfets can dissipate surge energy via avalanche, the GaN high-electron-mobility transistor (HEMT) has no avalanche capability and withstands surge energy by its overvoltage capability. However, a comprehensive study into the surge-energy robustness of the cascode GaN HEMT, a composite device made of a GaN HEMT and an Si mosfet, is still lacking. This article fills this gap by investigating the failure and degradation of 650-V-rated cascode GaN HEMTs in single-event and repetitive unclamped inductive switching (UIS) tests. The cascode was found to withstand surge energy by the overvoltage capability of the GaN HEMT, accompanied by avalanche in the Si mosfet. In single-event UIS tests, the cascode failed in the GaN HEMT at a peak overvoltage of 1.41.7 kV, which is statistically lower than the device's static breakdown voltage (1.82.2 kV). In repetitive UIS tests, the device failure boundary was found to be frequency dependent. At 100kHz, the failure boundary (1.3 kV) is even lower than the single-event UIS boundary. After 1 million cycles of 1.25-kV UIS stresses, devices show large but recoverable parametric shifts. All these failure and degradation behaviors can be explained by the buffer trapping in the GaN HEMT and the resulted change in its dynamic breakdown voltage. Moreover, the GaN buffer trapping is believed to be assisted by the Si mosfet avalanche. An analytical model was also developed to extract the charges and losses produced in the Si avalanche in a UIS cycle. These results provide new insights into the surge-energy and overvoltage robustness of cascode GaN HEMTs.

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Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

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A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

Design and Development of P-Gan Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

650-V E-mode p-GaN Gate HEMT with Schottky Source Extension towards Enhanced Short-Circuit Reliability

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Investigation of Saturated RON on GaN Power HEMTs by a Re-Configurable Continuous Switching Platform

Dynamic Interplays of Gate Junctions in Schottky-type P-Gan Gate Power HEMTs During Switching Operation

ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

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Short Circuit Capability Characterization and Analysis of P-Gan Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

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Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si