Abstract:In this article, a physics-based analytical model which considers the channel charge ( ${mathrm {Q}}_{{mathrm {ch}}}$ ) for enhancement-mode p-GaN power high-electron-mobility transistors (HEMTs) is developed. First, by considering the same dynamic channel charge ( ${mathrm {dQ}}_{{mathrm {ch}}}$ ) for the Schottky/p-GaN junction capacitance ( ${mathrm {C}}_{{mathrm {j,Sch}}}$ ) and the p-i-n-junction capacitance ( ${mathrm {C}}_{{mathrm {p-i-n}}}$ ), due to the p-GaN/AlGaN junction and two-dimensional electron gas (2DEG) charge, the analytical formula to calculate the voltage drop in the p-GaN layer ( ${mathrm {V}}_{{mathrm {pGaN}}}$ ) is presented. Second, by implementing the analytical formulae in the advanced SPICE model (ASM) GaN model, the proposed physics-based model reliably fits the measured ${C}$ – ${V}$ and ${I}_{{mathrm {D}}}$ – ${V}_{{mathrm {G}}}$ characteristics of the samples under different processing conditions. This provides significant insight regarding the Mg concentration, the voltage drop at the Schottky metal/p-GaN junction ( ${mathrm {V}}_{{mathrm {j,Sch}}}$ ), and the voltage drop at the p-GaN/AlGaN junction ( ${mathrm {V}}_{{mathrm {p-i-n}}}$ -/tex-math>). Finally, the ${I}_{{mathrm {D}}}$ – ${V}_{{mathrm {G}}}$ and ${I}_{{mathrm {D}}}$ – ${V}_{{mathrm {D}}}$ characteristics of enhancement-mode p-GaN power HEMTs are modeled, displaying good agreement with the experimental data.

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