Abstract:In this study, a time-resolved extraction method is developed to investigate the threshold voltage ( ${V}_{\text {th}}{)}$ of a Schottky-type p-GaN gate high electron mobility transistor (HEMT) biased at high ${V}_{\text {DS}}$ . A testing platform is built which applies a triangular waveform to the gate of the transistor and extracts ${V}_{\text {th}}$ when the drain current equals 10 mA. ${V}_{\text {th}}$ of the device is biased at up to 370 V is presented. Being biased at a higher ${V}_{\text {DS}}$ , ${V}_{\text {th}}$ drops by more than 0.5 V for ${V}_{\text {DS}}$ beyond $\sim $ 50 V. The negative shift of ${V}_{\text {th}}$ at high ${V}_{\text {DS}}$ is a result of the elevated potential of the floating p-GaN layer, which is caused by the capacitive coupling between the drain and the p-GaN layer. As a comparison, the ohmic-type p-GaN gate HEMT and the Si superjunction MOSFET (SJ-MOSFET) exhibit negligible ${V}_{\text {th}}$ shifts. The negative ${V}_{\text {th}}$ shift partially recovers during the recorded time of 2000 s due to the leakage current through the gate/ p-GaN Schottky contact. A higher ambient temperature increases the leakage current, and the recovery is observed quicker. This work provides an effective approach to survey the time-resolved ${V}_{\text {th}}$ evolution of Schottky-type p-GaN gate HEMT biased at high ${V}_{\text {DS}}$ and serves as a guidance for the reliability design of GaN power transistors and switching circuits.

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type P-Gan Gate HEMT Biased at High VDS

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -Gan Gate HEMTs

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type P-Gan Gate HEMT in Bridge-Leg Circuit

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs