Abstract:Highly stable threshold voltage $({V}_{\text {TH}})$ characteristics are an essential reliability requirement for p -GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate bias stresses for power applications. In this work, we demonstrate high- ${V}_{\text {TH}}$ (3.0 V) p-GaN HEMTs with robust ${V}_{\text {TH}}$ stability by p -GaN gate engineering via Mg doping and activation. The ${V}_{\text {TH}}$ degradation rates of the resulting device under both pulsed- ${I}/{V}$ and bias temperature instability (BTI) stress conditions are less than 10% at high temperatures up to 150°, which is much lower than that of conventional Schottky-type p -GaN HEMTs (20%–30%). Such notable ${V}_{\text {TH}}$ characteristics are due to the impact ionization (I.I.)-dependent hole compensation under certain gate stress, which effectively alleviates the electron trapping effect and reduces positive ${V}_{\text {TH}}$ shift. The I.I. occurring in the fully depleted p -GaN layer has been confirmed by both positive temperature-dependent gate breakdown characteristics and numerical simulations. Furthermore, shallow- and deep-level hole traps are identified in the gate-stack of high- ${V}_{\text {TH}}$ devices by performing the deep-level transient spectroscopy (DLTS) technique. Consequently, the trapping effect associated with hole traps may also alleviate the undesired electron-trapping-induced ${V}_{\text {TH}}$ shift. These results provide a critical understanding of the ${V}_{\text {TH}}$ stability of the high- ${V}_{\text {TH}}$ p -GaN HEMTs (HVT-HEMTs) and important design guidance for commercial device development.

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

Reverse-bias Stability and Reliability of Hole-Barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Hole-Induced Degradation in ${E}$ -Mode GaN MIS-FETs: Impact of Substrate Terminations

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Identifying the Location of Hole-Induced Gate Degradation in $\text{lpcvd} -\Text{sin}_{x}/\text{gan}$ MIS-FETs under High Reverse-Bias Stress

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor