Abstract:The gate reliability of normally off p-GaN gate AlGaN/GaN HEMTs and its underlying physical mechanism were investigated in a long-term recovery period after long-term forward gate stress. For the first time, a nondestructive gate degradation featuring a first degradation and then followed by a self-recovery dynamic was observed after a rigorous long-term (13-53 ks) forward gate stress. To elucidate the gate degradation kinetics, the static gate current, transfer characteristic and transient gate current were characterized before and after the gate stress as well as in the recovery intervals. During the stress, hole-injection together with trap-generation and hole-trapping concurred in AlGaN barrier is observed. Subsequently, electrons attracted by the trapped holes are persistently trapped in the AlGaN barrier, which leads to an electron energy barrier lowering and a continuing gate current increase in the recovery intervals. The hole-injection, hole-trapping, electron-trapping and hole/electron-detrapping take place in sequence during the stress and recovery process are reinforced by the inhomogeneous shift in VTH. The observed unique gate degradation dynamics and its underlying mechanism are of great value for p-GaN gate optimization to achieve improved gate reliability.

Identifying the Location of Hole-Induced Gate Degradation in $\text{lpcvd} -\Text{sin}_{x}/\text{gan}$ MIS-FETs under High Reverse-Bias Stress

Reverse-bias Stability and Reliability of Hole-Barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs

Reverse-Bias Stability And Reliability Of Enhancement-Mode Gan-Based Mis-Fet

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $ ext{GaO}_{mathrm{x}}mathrm{N}_{1-mathrm{x}}$ Channel

Dependence of ${v}_{\text {TH}}$ Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline <tex>$\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$</tex> Channel

Hole-Induced Degradation in ${E}$ -Mode GaN MIS-FETs: Impact of Substrate Terminations

Suppressed Hole-Induced Degradation In E-Mode Gan Mis-Fets With Crystalline Gaoxn1-X Channel

Analysis of Abnormal $\textit{C}$–$\textit{V}$ Hump on Si$_{\text{3}}$N$_{\text{4}}$ MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Investigation of Inrush Current Induced Trench Gate Degradation inside SiC MOSFET by New Fowler- Nordheim Localization Methodology

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs

Observation Of Self-Recoverable Gate Degradation In P-Gan Algan/Gan Hemts After Long-Term Forward Gate Stress: The Trapping & Detrapping Dynamics Of Hole/Electron

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias