Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

The ESD Behavior of D-Mode GaN MIS-HEMT

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Study on ESD Effects of GaAs HBT Power Amplifiers for DCS/GSM Dual Band Handsets

Investigation of Problems in JEDEC HBM ESD Test Standard

An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Device Model and Energy Loss Mechanism of Enhancement-Mode P-Gan HEMTs under Unclamped-Inductive-Switching Stress

A Case Study of Problems in JEDEC HBM ESD Test Standard

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Analysis of Abnormal $\textit{C}$–$\textit{V}$ Hump on Si$_{\text{3}}$N$_{\text{4}}$ MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Stress Reliability Study of GaN HEMT Devices

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress