Abstract:This work investigates the electrostatic discharge (ESD) reliability and corresponding failure/ degradation mechanism of -mode GaN metal-insulator-semiconductor (MIS)-high electron mobility transistor (HEMT). Through the transmission line pulse (TLP) test and human body model (HBM) test, it is demonstrated that the gate structure of GaN MIS-HEMT exhibits an asymmetric behavior in the forward and reverse ESD stress, which can attribute to the asymmetric forward and reverse gate capacitance. With the forward ESD pulses applied, the devices' gate shows a high ESD robustness (TLP failure current higher than 6 A), which can be contributed to the high forward gate capacitance. Because the gate capacitance under the reverse voltage is very small, there is almost no TLP current with the reverse TLP pulses applied to gate electrode. It is also found that, the device exhibits greater ESD robust in the D-to-G situation (2600 V in HBM test) than that in the S-to-G situation (1000 V in HBM test), which results from the longer G-to-D distance. Although the device gate structure can withstand a very high ESD voltage, it may already undergo severe degradation when subjected to a smaller ESD voltage. Therefore, it is necessary to integrate a bi-directional ESD protection device between the device's gate and source electrodes during the circuit design. In addition, for the S-to-D and D-to-S situation, the devices have not failed even with the applied pulse voltage increased to 1000 V in TLP test and 8000 V in HBM test.

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

The ESD Behavior of D-Mode GaN MIS-HEMT

Investigation of Problems in JEDEC HBM ESD Test Standard

A Case Study of Problems in JEDEC HBM ESD Test Standard

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics

Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs

Device Model and Energy Loss Mechanism of Enhancement-Mode P-Gan HEMTs under Unclamped-Inductive-Switching Stress

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

A New Empirical I-V Model for AlGaN/GaN HEMT Devices

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

A Passive Hybrid Circuit Model for Electrostatic Discharge (ESD) Characterization

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

A compact Non-Quasi-Static small-signal model for GaN HEMT