Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

650-V E-mode p-GaN Gate HEMT with Schottky Source Extension towards Enhanced Short-Circuit Reliability

Design and Development of P-Gan Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress

Distinct Short Circuit Capability of 650-V <i>p</i>-GaN Gate HEMTs under Single and Repetitive Tests

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Short Circuit Capability Characterization and Analysis of P-Gan Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Simulation Study of a High Gate-to-Source ESD Robustness Power P-Gan HEMT with Self-Triggered Discharging Channel

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

Simulation Study of Single-Event Burnout in GaN MISFET With Schottky Element

High-Voltage E-Mode P-Gan Gate HEMT on Sapphire with Gate Termination Extension

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Design Optimization of Wide-Gate Swing E-Mode GaN HEMTs with Junction Barrier Schottky Gate

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate