A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs
Yijun Shi,Zhiyuan He,Yun Huang,Zongqi Cai,Yiqiang Chen,Liye Cheng,Wanjun Chen,Ruize Sun,Chao Liu,Guoguang Lu,Bo Zhang
DOI: https://doi.org/10.1109/ted.2023.3257282
IF: 3.1
2023-04-25
IEEE Transactions on Electron Devices
Abstract:In this work, we have comprehensively studied the forward/reverse G-to-S electrostatic discharge (ESD) robustness for Ohmic-gate p-GaN HEMT. It is found that Ohmic-gate p-GaN HEMT exhibits superior G-to-S ESD robustness than Schottky-gate p-GaN HEMT with similar current capacity. First, Ohmic-gate p-GaN HEMT possesses a high forward/reverse second breakdown current ( ) of 9.3/2.7 A, while the value is 2.0/0.1 A for Schottky-gate p-GaN HEMT. Correspondingly, the equivalent forward/reverse human body model (HBM) failure voltages ( ) are 14/4.05 kV and 3/0.15 kV for Ohmic-gate and Schottky-gate p-GaN HEMTs, respectively. In addition, Schottky-gate p-GaN HEMT exhibits obvious changes in its ON-state current ( = 0.8/0.7 A), threshold voltage ( = 0.23/0.35 V), G-to-S leakage after the forward/reverse repetitive G-to-S ESD stress. While there is no obvious change ( = 0 A and = 0 V) in Ohmic-gate p-GaN HEMT, which may be attributed to that there are numerous holes to recombine the electrons trapped at the recombination center. But for Schottky-gate p-GaN HEMT, there is no enough holes to recombine the electrons trapped at the recombination center, due to the Schottky barrier at gate region.
engineering, electrical & electronic,physics, applied