Abstract:The withstand capability and threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math></inline-formula> ) instability of 1.2-kV silicon carbide (SiC) MOSFETs under repetitive short circuit (SC) tests are investigated. An SC test system is constructed to apply repetitive SC stress to SiC MOSFETs and measure the transfer <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> characteristics and gate-to-source leakage current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{\mathrm {GSS}}$ </tex-math></inline-formula> ) after each set of SC tests. To evaluate the SC capability, repetitive SC tests with different SC durations ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{p}$ </tex-math></inline-formula> ) are conducted until device failure. The SC withstand time (SCWT) at 1000 SC cycles is found to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 3.3~\mu \text{s}$ </tex-math></inline-formula> . <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math></inline-formula> instability under repetitive SC tests prior to the device failure is characterized. A bidirectional <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math></inline-formula> shift behavior, i.e., negative shift at shorter <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{p}$ </tex-math></inline-formula> and positive shift at longer <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{p}$ </tex-math></inline-formula> , was revealed. The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math></inline-formula> shifts under repetitive SC tests are attributed to the SC pulse process according to the results of high-temperature reverse bias (HTRB) and dynamic high-temperature gate bias (HTGB) tests. The underlying mechanisms of the complex <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math></inline-formula> shift behavior are explained in a unified framework by taking into account the junction temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T_{j}$ </tex-math></inline-formula> ) increase with longer <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{p}$ </tex-math></inline-formula> . TCAD device simulation is used to help analyze the mechanisms.

Short Circuit Capability and Short Circuit Induced <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{TH}}$ </tex-math></inline-formula> Instability of a 1.2-kV SiC Power MOSFET

Short Circuit Capability and Short Circuit Induced $v_{\mathrm{th}}$ Instability of a 1.2-Kv SiC Power MOSFET

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Repetitive Short Circuit Energy Dependent <tex>$V_{\text{TH}}$</tex> Instability of 1.2kV SiC Power MOSFETs

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Short Circuit Capability Characterization and Analysis of P-Gan Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

Distinct Short Circuit Capability of 650-V <i>p</i>-GaN Gate HEMTs under Single and Repetitive Tests

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs