Abstract:In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula>) and excellent saturation drain current. Benefiting from the optimized material growth of high-resistivity buffer, effective Al2O3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of <inline-formula> <tex-math notation="LaTeX">$18.5~\mu \text{m}$ </tex-math></inline-formula> exhibits a <inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula> of 1344 V at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/mm with grounded substrates, the highest among all the reported normally-OFF GaN-on-Si transistors. Well-restored high-density 2-D electron gas and efficient gate modulation enable the device with a high <inline-formula> <tex-math notation="LaTeX">${I}_{DS,max}$ </tex-math></inline-formula> of 450 mA/mm and a low specific ON-resistance of 3.92 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2. Moreover, a large threshold voltage of 1.6 V (at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{A}$ </tex-math></inline-formula>/mm) and a steep subthreshold slope of 66 mV/dec have been achieved, with negligible threshold voltage shift upon long-term forward gate stress at 150 °C. These results illustrate the great potential of p-GaN gate HEMTs on Si for beyond 600-V applications.

Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature

UIS Withstanding Capability of GaN E-HEMTs with Schottky and Ohmic p-GaN contact

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

Device Model and Energy Loss Mechanism of Enhancement-Mode P-Gan HEMTs under Unclamped-Inductive-Switching Stress

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Roles of Hole Trap on Gate Leakage of p -GaN HEMTs at Cryogenic Temperatures

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures

Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type <i>p</i>-GaN gate HEMTs

Dynamic Gate Breakdown of P-Gate GaN HEMTs in Inductive Power Switching

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs