Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Dynamic Gate Breakdown of P-Gate GaN HEMTs in Inductive Power Switching

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Dynamic Interplays of Gate Junctions in Schottky-type P-Gan Gate Power HEMTs During Switching Operation

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

Maximizing the Performance of 650-V P-Gan Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Maximizing the performance of 650 V p-GaN gate HEMTs: Dynamic ron characterization and gate-drive design considerations

Dynamic Threshold Voltage in $P$-Gan Gate HEMT

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications

Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ under Switching Operation in Schottky-Type P-Gan Gate HEMTs

A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices

Investigation of Saturated RON on GaN Power HEMTs by a Re-Configurable Continuous Switching Platform

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs

Method to Study Dynamic Depletion Behaviors in High-Voltage (<tex>$BV=1.4\ \text{kV}$</tex>) p-GaN Gate HEMT on Sapphire Substrate

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kv}$) P-Gan Gate HEMT on Sapphire Substrate

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching