Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications
Xiangdong Li,Jie Zhang,Jian Ji,Zhibo Cheng,Junbo Wang,Long Chen,Lezhi Wang,Shuzhen You,Lili Zhai,Qiushuang Li,Yuanhang Zhang,Tong Liu,Zilan Li,Yue Hao,Jincheng Zhang
DOI: https://doi.org/10.1109/ted.2024.3392175
IF: 3.1
2024-05-25
IEEE Transactions on Electron Devices
Abstract:Traditional GaN HEMTs on silicon suffer relatively low lateral and vertical blocking voltages and thick buffers, which impede their use in -kV applications. In this work, the prototypes of 8-kV GaN HEMTs on 6-in sapphire are successfully fabricated using CMOS-compatible processing. An etch-stop nitride layer AlN in the in situ SiN cap precisely defines the gate dielectric thickness. Au-free low-temperature ohmic contact and metal I are achieved by Ti/AlCu/Ti/TiN, and gate metal is achieved by TiN/Ti/AlCu/Ti/TiN, which significantly reduces the material cost. The high mechanical strength of sapphire results in low nonuniformity and well-controlled warpage, enabling the use of a 1.5- m buffer. The fabricated HEMTs with an of m exhibit a low of mm and a stable of −20 V. Benefiting from high-quality in situ SiN passivation, the dynamic and shift are maintained within 2.5% and 10%, respectively. The OFF-state breakdown voltage (BV) is increased beyond 8 kV using a simple device structure with only two field plates. The proposed low-cost and CMOS-compatible 8-kV GaN HEMTs fabricated on 6-in sapphire highlight an extremely simple epitaxy process, lateral device structure, and processing flow. Therefore, they offer great potential for serving future medium-voltage applications.
engineering, electrical & electronic,physics, applied