Abstract:This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}$</tex> . For <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}=27 \mu\mathrm{m}$</tex> , the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{on}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$17.7\ \ \Omega\cdot \text{mm}$</tex> , and the specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{sp}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.73\ \mathrm{m}\Omega\cdot \text{cm}^{2}$</tex> . To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics of the structures, with the pinch-off voltage of the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed.

Experimental Measurement of Depletion Region Distribution in Gan Hemts with Channel-Probe Branch

Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored with A Channel-Probe Branch Structure.

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Method to Study Dynamic Depletion Behaviors in High-Voltage (<tex>$BV=1.4\ \text{kV}$</tex>) p-GaN Gate HEMT on Sapphire Substrate

Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kv}$) P-Gan Gate HEMT on Sapphire Substrate

Experimental evidence of surface mobile holes on GaN HEMT structure

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

Planar Wrap-Around Gated Algan/Gan Mis-Hemts

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Study of drain induced channel effects in vertical GaN junction field-effect transistors

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Investigation on the Sources of 2DEG in AlxGal_xN/GaN HEMT*

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach

Effects of Depletion Region in GaN-based Metal-Semiconductor-metal Planar Inter-Digitated Varactor

Investigation on Mechanisms of Current Saturation in Gateless AlGaN/GaN Heterostructure Device

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects