Abstract:In this paper, a gallium nitride (GaN) vertical superjunction (SJ) MOSFET with trench gate is proposed and studied by the TCAD simulation. In order to achieve the typical electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field) modulation effect by the P + /N/N + structure in the conventional Si SJ-MOS, the P-GaN/unintentional doped (UID)-GaN/N + -GaN stack is alternatively used by taking into account the unavailability of P + -GaN. In this manner, the P-GaN and N + -substrate serve as the field-stop (FS) layers in the proposed GaN SJ-MOS. In the forward bias, the enhancement-mode function of the device is enabled by the gated side-wall and aperture composite channel that leads to a 1.47-V threshold voltage of the device. In the reverse bias, the breakdown of the device is governed by two mechanisms: 1) the punchthrough (PT) in the top P-GaN/N-drift junction due to the possible under design of the P-GaN thickness; 2) the avalanche breakdown triggered by high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field due to the possible under design of the bottom UID-GaN thickness. Hence, from the uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution point of view, a device optimization approach for GaN vertical SJ-MOS is proposed. The hole and electron densities of P-GaN and N-drift are optimized to achieve a uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution in the device both in the lateral and vertical directions, which is found to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6 \times 10^{16}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula> . Moreover, the thickness ratio of P-GaN/UID-GaN is designed to obtain an identical intrinsic breakdown for the top P-GaN/N-drift junction and bottom UID/N-drift region, which enables the maximum Baliga’s figure-of-merit (BFOM) of the device. The concept of device design and optimization is of great interests for GaN vertical device for over kilovolts applications.

Study of drain induced channel effects in vertical GaN junction field-effect transistors

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET with Optimized Electrical Field Transfer Terminal Structure

Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels

A Novel Normally-off GaN Vertical Schottky Source Tunnel-Junction Field-Effect Transistor

Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

GaN Based Vertical Transistors on GaN Substrates

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function

A Novel Kilovolts GaN Vertical Superjunction MOSFET With Trench Gate: Approach for Device Design and Optimization

Computational Study of Graphene-Based Vertical Field Effect Transistor

Over Kilovolt Gan Vertical Super-Junction Trench Mosfet: Approach For Device Design And Optimization

Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

A Novel GaN Vertical Junction Field-Effect Transistor with Intrinsic Reverse Conduction Capability and Kilo-Volt Breakdown Voltage

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Study on High Breakdown Voltage GaN-based Vertical Field Effect Transistor with Interfacial Charge Engineering for Power Applications

Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance