Abstract:Many emerging GaN electronic and optoelectronic devices comprise p-type gallium nitride (p-GaN) layers buried below n-type layers, which often show nonuniform (i.e., laterally graded) acceptor concentration ( after activation. In power devices, such buried p-GaN layer could be thick and lightly doped, yet its voltage blocking characteristics remain unclear. This work fills this gap by studying the breakdown voltage ( and leakage current of vertical GaN p-n+ diodes with the uniform and nonuniform profiles in the 3.8- m-thick, lightly doped p-GaN drift region. The nonuniform is produced by burying the p-GaN under an n-GaN cap, followed by sidewall activation. The diodes show up to over 400 V, which is the highest reported in vertical GaN devices with a p-type drift region. For the sidewall-activated diodes, their is determined either by the peak electric field at the device edge (with the highest activation ratio) or the punchthrough in the center (with the lowest activation ratio). An additional p++-GaN cap is essential to suppress the latter breakdown mechanism. For devices with either uniform or nonuniform , their leakage current can be explained by variable range hopping (VRH), while in the sidewall-activated devices, the edge region instead of the total device area dominates the leakage current. These results provide key guidance for the design and processing of future high-voltage GaN devices with buried p-GaN, such as the GaN superjunction.

Study on High Breakdown Voltage GaN-based Vertical Field Effect Transistor with Interfacial Charge Engineering for Power Applications

Design and Simulation of High-Breakdown-voltage GaN-based Vertical Field-Effect Transistor with Interfacial Charge Engineering

Design of High Breakdown Voltage GaN-based Vertical HFETs with P-Gan Island Structure for Power Applications

Design of High Breakdown Voltage Gan Vertical Hfets with P-Gan Buried Buffer Layers for Power Switching Applications

High Breakdown Voltage GaN-on-insulator Based Heterojunction Field Effect Transistor with a Partial Back Barrier Layer

Design of High Breakdown Voltage Vertical GaN P-N Diodes with High-K/low-k Compound Dielectric Structure for Power Electronics Applications

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

A Novel Junction Field Plates AlGaN/GaN Heterostructure Field Effect Transistors with High Breakdown Voltage and Baliga's Figure of Merit for Power Electronics Application

Design and Optimization of Vertical GaN PiN Diodes with Fluorine-Implanted Termination

Interface charge engineering on an in situ SiN x /AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Design of Ga 2 O 3 Trench Gate MOSFET Devices with Dielectric Pillars

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

Study of drain induced channel effects in vertical GaN junction field-effect transistors

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET with Optimized Electrical Field Transfer Terminal Structure

Over 10 Ka/cm2 Inductive Current Sustaining Capability Demonstrated in GaN-on-GaN Pn Junction with High Ruggedness

The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions