Abstract:The gallium nitride (GaN) material system has become one of the most promising material systems for high efficiency power switching applications due to its unique material properties, including a wide band gap, high critical electric field, and large mobility and saturation electron velocity. For high voltage, high current applications, vertical device structures on bulk GaN substrates are especially promising [1]. Although the ability to scale the devices to large absolute currents is critical for power electronics, to date the current-carrying capability of many demonstrated devices has fallen short of theoretical expectations due to non-idealities in device area scaling. High performance vertical GaN-on-GaN p-n diodes using N ion-implantation edge termination incorporating a partially-compensated layer were demonstrated to achieve breakdown voltages of 1.2 kV, and both the reverse and forward current densities were found to scale well with area [2]. In this work, a device structure designed for higher breakdown operation was explored, and devices with a range of areas were fabricated and tested under high-current drive conditions. Peak forward currents approaching 10 A at a forward voltage of 5.3 V were obtained for typical 550 μm diameter GaN-on-GaN p-n diodes having a breakdown voltage of 1.6 kV.

Design of High Breakdown Voltage Vertical GaN P-N Diodes with High-K/low-k Compound Dielectric Structure for Power Electronics Applications

Optimization of High Breakdown Voltage Vertical Trapezoidal GaN P‐n Diode with a High‐k/low‐k Compound Dielectric for Power Applications

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-<i>K</i>/low-<i>K</i> compound dielectric structure

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

Vertical GaN-on-GaN P-N Diodes with 10-A Forward Current and 1.6 Kv Breakdown Voltage

Design of High Breakdown Voltage GaN-based Vertical HFETs with P-Gan Island Structure for Power Applications

Study on High Breakdown Voltage GaN-based Vertical Field Effect Transistor with Interfacial Charge Engineering for Power Applications

High Voltage Vertical P-N Diodes with Ion-Implanted Edge Termination and Sputtered SiNx Passivation on GaN Substrates

Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

Design of High Breakdown Voltage Gan Vertical Hfets with P-Gan Buried Buffer Layers for Power Switching Applications

7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Vertical power diodes based on bulk GaN substrates

High Voltage, High Current GaN-on-GaN P-N Diodes with Partially Compensated Edge Termination

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

GaN-based Quasi-Vertical Schottky Barrier Diode Hybridized with P-Nio Layer to Achieve 1.1 Kv Breakdown Voltage and Enhance the Current Spreading Effect

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

High Power Figure-of-Merit, 10.6-Kv AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-m Anode-to-Cathode Spacing

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with P‐gan Junction Termination Extension and Experimental Demonstration of Selective P‐doping by Implantation

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

1 Kv/1.3 M Omega.Cm(2) Vertical Gan-On-Gan Schottky Barrier Diodes With High Switching Performance