Abstract:The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schrödinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas.

Experimental evidence of surface mobile holes on GaN HEMT structure

Evidence of Mobile Holes on GaN HFET Barrier Layer Surface - Root Cause of High Power Transistoramplifier Current Collapse

Experimental Measurement of Depletion Region Distribution in Gan Hemts with Channel-Probe Branch

Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored with A Channel-Probe Branch Structure.

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

Transient Leakage Current Technique for Mis Hemt (al2o3/algan/gan) Dielectric Semiconductor Interface Property Characterization

Experimentation and Simulation for Cap Gate AlGaN/GaN HEMT Power Devices

First Demonstration of an N-Polar InAlGaN/GaN HEMT

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

The Sensing Mechanism of InAlN/GaN HEMT

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Polar Semiconductor Heterojunction Structure Energy Band Diagram Considerations