Abstract:A novel enhancement-mode (E-mode) high electron mobility transistor (HEMT) with three-dimensional electron gas (3DEG) and three-dimensional hole gas (3DHG) is presented. It features a GaN-top layer, a positive graded AlGaN barrier layer (GAL), and a negative graded AlGaN back barrier layer (GABL) (wherein the positive/negative doping gradient is defined with respect to the growth direction), with a vertical conduction channel aside a MIS trench gate. The 2DHG is formed at the interface between the GaN-top layer and GAL. The 3DEG and 3DHG are formed due to the polarization induced by linearly grading Aluminum (Al) composition from 0 to x(Al) in GAL and 0.4 to 0 in GABL, respectively. The source and drain locate at the same side of the MIS trench gate, and the source contacts with the gate. Firstly, 2DHG blocks the electron current conduction path between the source and 3DEG so as to achieve E-mode. Secondly, the high-sheet density 3DEG in GAL greatly increases the on-state current. Thirdly, the leakage current effectively is reduced by the 3DHG in GABL, improving the breakdown voltage. Fourthly, a high breakdown voltage (BV) is obtained because the polarization junction formed by the polarization charges in GAL and GABL improves the electric field distribution in the drift region. The BV of the proposed HEMT increases to 1080 V from 47 V of the conventional MIS HEMT at the same length of the drift region, and specific on-resistance (R-on,(sp)) decreases to 0.29 m Omega cm(2) from 0.64 m Omega cm(2) in simulation.

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

Breakdown Voltage Enhancement For Gan High Electron Mobility Transistors

An Algan/Gan Hemt with Enhanced Breakdown and A Near-Zero Breakdown Voltage Temperature Coefficient

GaN high electron mobility transistors with localized Mg doping and Drain Metal Extension

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Optimization AlGaN/GaN HEMT with Field Plate Structures

Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs with a Source-Connected Air-Bridge Field Plate

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

Breakdown Voltage Enhancement for Power AlGaN/GaN HEMTs with Air-bridge Field Plate

High Performance Enhancement-Mode HEMT with 3DEG to Conduct Current and 3DHG As Back Barrier

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Study on the Gate-Terminated Field-Plates for GaN-Based HEMT