GaN high electron mobility transistors with localized Mg doping and Drain Metal Extension

Gang Xie,Bo Zhang,Fu, F.Y.,Ng, W.T.
DOI: https://doi.org/10.1109/ICSICT.2010.5667274
2010-01-01
Abstract:A Magnesium Doped Layer (MDL) under the 2-DEG channel and a Drain Metal Extension (DME) are proposed to provide a new degree of freedom in the optimization between breakdown voltage (BV) and specific-on-resistance (Ron-sp) in AlGaN/GaN HEMTs. The surface electric field of the proposed structure is distributed more evenly when compare to the MDL-only structure with the same dimensions. A breakdown voltage of 1390V with specific-on-resistance of 4mΩ·cm2 was obtained with LM = 1μm, a peak concentration of 8×1017cm-3, Lpd = 3μm and a drift region length of 10μm. Comparing with the conventional MDL-only HEMT structure, the MDL-DME is shown to deliver comparable specific-on-resistance while featuring a 54% BV improvement without any area overhead penalty.
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