Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon with Schottky Tri-Drain Extension

Yi-Ping Huang,Ching-Sung Lee,Wei-Chou Hsu

DOI: https://doi.org/10.1109/led.2020.3000153

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:This study demonstrates an enhancement-mode (E-mode) InAlN/GaN MOSHEMT on a silicon substrate with a Schottky tri-drain extension (STDE) to yield a large breakdown voltage ( $\text{V}_{\text {BD}}$ ) while maintaining a low on-resistance ( $\text{R}_{\text {on}}$ ). The E-mode operation is realized by a recessed tri-gate nanowire structure. The STDE functions as a drain-connected field plate (FP) to effectively distribute the electric field (E-field) around the drain contact edge, improving the $\text{V}_{\text {BD}}$ . Moreover, through the metal of the STDE directly contacting the 2-D electron gas (2-DEG) from the sidewalls, a low specific $\text{R}_{\text {on}}$ ( $\text{R}_{\text {on, sp}}$ ) is achieved. The proposed device with a gate-to-drain length ( $\text{L}_{\text {GD}}$ ) of $5~\mu \text{m}$ exhibits a threshold voltage ( $\text{V}_{\text {TH}}$ ) of +0.9 V, large maximum drain current ( $\text{I}_{\text {D, max}}$ ) of 815 ± 27 mA/mm, high $\text{I}_{\text {on}}/\text{I}_{\text {off}}$ ratio of 1010, steep subthreshold swing (SS) of 67 mV/decade, superior $\text{V}_{\text {BD}}$ of 830 V, and low $\text{R}_{\text {on, sp}}$ of 0.74 ± 0.04~\text{m}\Omega \cdot cm2. With $\text{L}_{\text {GD}}$ of $10~\mu \text{m}$ , a $\text{V}_{\text {BD}}$ of 1190 V is achieved, corresponding to a $\text{R}_{\text {on, sp}}$ of 1.39 ± $0.07~\text{m}\Omega \cdot$ cm2. These results reveal great potential for future E-mode power device applications.