Abstract:Enhancement-mode (E-mode) buried <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel GaN metal-oxide-semiconductor field-effect-transistors ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN-MOSFET’s) with threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) of −1.7 V, maximum ON-state current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}$ </tex-math></inline-formula> ) of 6.1 mA/mm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> are demonstrated on a standard <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN/AlGaN/GaN-on-Si power HEMT substrate. An oxygen plasma treatment (OPT) was deployed to the gated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN region where a relatively thick (i.e. 31 nm) GaN is retained without aggressive gate recess. The OPT converts the top portion of the GaN layer to be free of holes so that only the bottom portion remains <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -type while being spatially separated from the etched GaN surface and gate-oxide/GaN interface. As a result, E-mode operation is enabled while a high-quality <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel is retained. Multi-energy fluorine ion implantation was implemented for planar isolation of GaN <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel FETs with mesa edges and sidewalls eliminated. Consequently, high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio is obtained.

High <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${I}_{\text{OFF}}$ </tex-math></inline-formula> Ratio Enhancement

High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ / ${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

High-Performance E-Mode <i>p</i>-Channel GaN FinFET on Silicon Substrate With High <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> and High Threshold Voltage

High-Yield Enhancement-Mode GaN P-Fet with Etching-Target Layer and High-Selectivity Etching Techniques

Enhancement-Mode GaN P-Channel MOSFETs for Power Integration

Development of Enhancement-Mode GaN P-Fet with Post-Etch Wet Treatment on P-Gan Gate HEMT Epi-Wafer

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With A/mm Leakage Current and ON/OFF Current Ratio

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

Polarization-Assisted Acceptor Ionization in E-Mode GaN P-Fet on 650-V E-mode P-Gan Gate HEMT (EPH) Platform

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

823-Ma/mm Drain Current Density and 945-Mw/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs with a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers