Abstract:Enhancement-mode (E-mode) buried <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel GaN metal-oxide-semiconductor field-effect-transistors ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN-MOSFET’s) with threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) of −1.7 V, maximum ON-state current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}$ </tex-math></inline-formula> ) of 6.1 mA/mm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> are demonstrated on a standard <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN/AlGaN/GaN-on-Si power HEMT substrate. An oxygen plasma treatment (OPT) was deployed to the gated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN region where a relatively thick (i.e. 31 nm) GaN is retained without aggressive gate recess. The OPT converts the top portion of the GaN layer to be free of holes so that only the bottom portion remains <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -type while being spatially separated from the etched GaN surface and gate-oxide/GaN interface. As a result, E-mode operation is enabled while a high-quality <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel is retained. Multi-energy fluorine ion implantation was implemented for planar isolation of GaN <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel FETs with mesa edges and sidewalls eliminated. Consequently, high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio is obtained.

High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ / ${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

High <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${I}_{\text{OFF}}$ </tex-math></inline-formula> Ratio Enhancement

Enhancement-Mode GaN P-Channel MOSFETs for Power Integration

High-Performance E-Mode <i>p</i>-Channel GaN FinFET on Silicon Substrate With High <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> and High Threshold Voltage

High-Yield Enhancement-Mode GaN P-Fet with Etching-Target Layer and High-Selectivity Etching Techniques

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With A/mm Leakage Current and ON/OFF Current Ratio

Development of Enhancement-Mode GaN P-Fet with Post-Etch Wet Treatment on P-Gan Gate HEMT Epi-Wafer

On-chip AlGaN/GaN HEMTs with the Compatible Normally-off p-GaN Gate and Normally-on MIS Gate Fabrication Processes

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

Enhancement-Mode Gan Double-Channel Mos-Hemt with Low On-Resistance and Robust Gate Recess

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

Enhancement-mode N-Gan Gate P-Channel Heterostructure Field Effect Transistors Based on GaN/AlGaN 2D Hole Gas

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Characterization of 880 V Normally off GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process

Polarization-Assisted Acceptor Ionization in E-Mode GaN P-Fet on 650-V E-mode P-Gan Gate HEMT (EPH) Platform

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric