A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

Haochen Wang,Kuangli Chen,Ning Yang,Jianggen Zhu,Enchuan Duan,Shuting Huang,Yishang Zhao,Bo Zhang,Qi Zhou

DOI: https://doi.org/10.3390/electronics13040729

IF: 2.9

2024-02-11

Electronics

Abstract:In this work, a novel enhancement-mode GaN p-MISFET with a buried back gate (BBG) is proposed to improve the gate-to-channel modulation capability of a high drain current. By using the p-GaN/AlN/AlGaN/AlN double heterostructure, the buried 2DEG channel is tailored and connected to the top metal gate, which acts as a local back gate. Benefiting from the dual-gate structure (i.e., top metal gate and 2DEG BBG), the drain current of the p-MISFET is significantly improved from −2.1 (in the conv. device) to −9.1 mA/mm (in the BBG device). Moreover, the dual-gate design also bodes well for the gate to p-channel control; the subthreshold slope (SS) is substantially reduced from 148 to ~60 mV/dec, and such a low SS can be sustained for more than 3 decades. The back gate effect and the inherent hole compensation mechanism of the dual-gate structure are thoroughly studied by TCAD simulation, revealing their profound impact on enhancing the subthreshold and on-state characteristics in the BBG p-MISFET. Furthermore, the decent device performance of the proposed BBG p-MISFET is projected to the complementary logic inverters by mixed-mode simulation, showcasing excellent voltage transfer characteristics (VTCs) and dynamic switching behavior. The proposed BBG p-MISFET is promising for developing GaN-on-Si monolithically integrated complementary logic and power devices for high efficiency and compact GaN power IC.

engineering, electrical & electronic,computer science, information systems,physics, applied

What problem does this paper attempt to address?

The paper aims to address the performance issues of Gallium Nitride (GaN) p-channel Metal-Insulator-Semiconductor Field-Effect Transistors (p-MISFETs) in complementary logic circuits, particularly improving their current driving capability and subthreshold characteristics.

Specifically:
1. **Insufficient current driving capability**: Traditional GaN p-MISFETs suffer from poor current driving capability due to low hole mobility and low magnesium doping activation rate.
2. **Poor subthreshold characteristics**: Traditional GaN p-MISFETs have a high subthreshold slope (SS), which affects the device performance.

To solve these problems, the paper proposes a novel enhancement-mode GaN p-MISFET featuring a Buried Back Gate (BBG). By utilizing a dual-gate structure (top metal gate and buried 2DEG back gate), the gate modulation capability over the channel is improved. This design results in significant improvements in device performance at high current densities and a substantial reduction in the subthreshold slope. Additionally, the BBG p-MISFET demonstrates good complementary logic inverter performance, making it suitable for monolithic integration of GaN complementary logic and power devices.