Enhancement-mode N-Gan Gate P-Channel Heterostructure Field Effect Transistors Based on GaN/AlGaN 2D Hole Gas

Fu Chen,Ronghui Hao,Guohao Yu,Xiaodong Zhang,Liang Song,Jinyan Wang,Yong Cai,Baoshun Zhang

DOI: https://doi.org/10.1063/1.5119985

IF: 4

2019-01-01

Applied Physics Letters

Abstract:In this letter, E-mode n-GaN gate heterostructure field effect transistors (HFETs) utilizing polarization induced 2D hole gas (2DHG) have been proposed. It is found that the introduction of the n-GaN cap between the GaN channel layer and the gate metal can effectively deplete the 2DHG in the gate region, resulting in E-mode operation. The simulation results indicate that by adjusting the GaN channel thickness and n-GaN cap doping concentration, threshold voltage of the n-GaN gate p-channel HFETs can be more than |−1.5| V without sacrificing the ON-state current and the ON/OFF ratio, which is enabled to overcome the trade-off observed from conventional p-channel devices.