High-Yield Enhancement-Mode GaN P-Fet with Etching-Target Layer and High-Selectivity Etching Techniques

Xuanming Zhang,Yuanlei Zhang,Jiachen Duan,Zhiwei Sun,Weisheng Wang,Ye Liang,Xuelin Yang,Lisheng Zhang,Zhenghao Chen,Jie Zhang,Kain Lu Low,Wen Liu

DOI: https://doi.org/10.1109/ted.2024.3493056

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:This article presents the enhancement-mode (E-mode) GaN p -channel heterojunction field-effect transistors ( p -FETs) with p -Al $_{\text{0.05}}$ Ga $_{\text{0.95}}$ N etching-target layer (ETL). The optimized high-selectivity etching technique achieves an etch rate of approximately 1 nm/min for p -GaN, while also generating a selectivity ratio of 4:1 between p -GaN and p -Al $_{\text{0.05}}$ Ga $_{\text{0.95}}$ N. High-yield E-mode p -FET with ETL has been obtained as the etching process window was expanded to 10 min. The devices achieved the characteristics of a threshold voltage ( $\textit{V}_{\text{th}}$ ) of $-$ 1.15 V and a maximum current density ( $\textit{I}_{\textit{D},\text{max}}$ ) of 6.16 mA/mm. Furthermore, the characteristics of multiple devices demonstrate the high consistency and reproducibility of p -FETs’ $\textit{V}_{\text{th}}$ and $\textit{I}_{\text{ON}}$ , thus providing significant opportunities for developing complementary circuit integration.