(Invited) Threshold Voltage Modulation by Interface Charge Engineering for High Performance Enhancement-Mode Al2O3/GaN Power Mosfets
Qi Zhou,Anbang Zhang,Yuanyuan Shi,Zeheng Wang,Li Liu,Wanjun Chen,Bo Zhang
DOI: https://doi.org/10.1149/ma2016-02/35/2273
2016-01-01
ECS Meeting Abstracts
Abstract:III-Nitride metal-oxide-semiconductor field effect transistors (MOSFETs) have great potential for next generation energy-efficient power switching. Due to the fail-safe consideration, the enhancement-mode (E-mode) operation is highly desirable for GaN MOSFETs in power electronics. Furthermore, in high frequency switching applications, devices with high V TH (e.g. V TH>6 V) and large gate swing (e.g. >10 V) are required to prevent them from faulty turn-on due to the gate driver failure or electromagnetic interference. Many approaches have been demonstrated in pushing the V TH more positive [1], [2]. However, achieving high V TH and good performance simultaneously remains a major challenge due to positive interface fixed charges [3], [4]. In this paper, the presence of positive interface fixed charges (Q it~1.44×1013 cm-2) at the ALD-Al2O3/GaN interface was found in the fully recessed Al2O3/GaN MOSFETs. The origin of the interface charges is proposed to be the Ga-O bond and metal Ga dangling bond (DB) at the Al2O3/GaN interface generated in the gate recessing process and Al2O3 deposition, respectively. An efficient approach to engineer the interface positive fixed charges was demonstrated by post-dielectric annealing (PDA) in N2, resulting in a reduction of Q it from 1.44×1013 to 3×1012 cm-2. The reduction of Q it leads to a significant positive shift in V TH and an increase of electron mobility that enabling the E-mode operation of Al2O3/GaN MOSFETs with a uniquely high V TH of +7.6 V and drive current as high as 355 mA/mm. The interface charge engineering method demonstrated in this work is promising to fabricate E-mode GaN devices with uniquely higher V TH and low on-resistance. References 1. Y.-H. Wang, et al., IEEE Electron Device Lett., 36, (2015). 2. Z. Tang, et al., IEEE Electron Device Lett., 34, (2013). 3. M. Esposto, et al., Appl. Phys. Lett., 99, (2011). 4. S. Ganguly, et al., Appl. Phys. Lett., 99, (2011). Figure 1