Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

Transient Leakage Current Technique for Mis Hemt (al2o3/algan/gan) Dielectric Semiconductor Interface Property Characterization

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (Mis)-Hemts

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Investigation of Drain Current Transient in InP-based High Electron Mobility Transistors (Hemts)

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Mechanism of Leakage of Ion-Implantation Isolated AlGaN/GaN MIS-high Electron Mobility Transistors on Si Substrate

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Characterization of Leakage and Reliability of SiN x Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Performance of an AlGaN/GaN MISHEMT with Sodium Beta-Alumina for Gate Insulation and Surface Passivation

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric