Abstract:GaN-based heterojunction field effect transistors (HFETs) are strong contenders to replace vacuum tube-based devices in the high power, and high frequency arena. However, the piezoelectric stain, exploited to generate high density two-dimensional electron gases (2DEGs) in AlGaN/GaN devices is not necessarily desirable nor might it bode well in terms of device reliability. By using lattice-matched InAlN as the barrier, even higher densities of 2DEG and now respectable DC and RF performance can be achieved while at the same time avoiding the strain and subsequent reliability issues in the devices. However, little work has been done in identification of trapping mechanisms in the InAlN-based devices. The trapping is at the heart of the reduced RF performance of all the GaN-based devices, limiting the maximum attainable RF power. In this work, transient current spectroscopy, which observes the dynamics of the drain current during gate lag measurements, is utilized to ascertain information about the trapping levels, cross sections, and spatial locations of traps in the InAlN-based devices. Preliminary measurements indicate that one of the traps identified in this work (at 0.12eV) is similar to one measured by deep level transient spectroscopy (DLTS) in similar structures. Investigations of this type are imperative for the further development and implementation of this highly promising material system.

Investigation of Drain Current Transient in InP-based High Electron Mobility Transistors (Hemts)

Evidence of Existence of Different Surface States in INP-Based High Electron Mobility Transistors (Hemts)

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Transient Leakage Current Technique for Mis Hemt (al2o3/algan/gan) Dielectric Semiconductor Interface Property Characterization

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Investigation of Drain Current Transient in BCB- and SiN-passivated Al0.25Ga0.75As∕In0.2Ga0.8As Pseudomorphic High Electron Mobility Transistors

TCAD-Based Investigation of the Electrical Characteristics of Normally off P-Gan Passivated GaN HEMTs

Identification of Trap States in P-Gan Layer of a P-Gan/algan/gan Power HEMT Structure by Deep-Level Transient Spectroscopy

Study of Traps in Low-Temperature Polysilicon Thin Film Transistors Using a Current Transient Method

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel P-Finfets.

1.0 Μm Gate-Length InP-based InGaAs High Electron Mobility Transistors by Mental Organic Chemical Vapor Deposition

Trap-Related Current Collapse Effects in GaN HEMTs