Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel P-Finfets.

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

Impact of Electron Trapping on Energy Distribution Characterization of NBTI-Related Defects for Si P-Finfets

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si P-Finfets

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

The Energy Distribution of NBTI-induced Hole Traps in the Si Band Gap in PNO Pmosfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Comparative Study on NBTI Kinetics in Si P-Finfets with B2H6-based and SiH4-based Atomic Layer Deposition Tungsten (ALD W) Filling Metal