Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si P-Finfets

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps under DC/ AC NBTI Stress/Recovery Condition in Si P-Finfets

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport

Ultrathin Oxynitride P-Mosfet Recovery Characteristics under NBTI Stress

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Impact of Electron Trapping on Energy Distribution Characterization of NBTI-Related Defects for Si P-Finfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Recovery Characteristics of Nbti of Pmosfets with Oxynitride Dielectrics under Drain Bias

Interface Trap Generation and Recovery Mechanisms During and after Positive Bias Stress in Metal-Oxide-semiconductor Structures

Alleviation of Negative-Bias Temperature Instability in Si P-Finfets with ALD W Gate-Filling Metal by Annealing Process Optimization

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel P-Finfets.

A novel negative bias temperature instability model for nanoscale finfet

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method