Abstract:The shift of the threshold voltage, Vth, of p-channel metal-oxide-semiconductor field-effect transistors with HfSiON gate stacks, subjected to negative bias temperature stress, is investigated. It is found that Vth shift increases with time, like a power law, with an exponent that decreases with the amount of Hf in the HfSiON layer. Within the reaction-diffusion model for negative bias temperature instabilities, this finding suggests that the transport of hydrogen species in the gate stack is slower (i.e., more dispersive) in Hf-rich silicate layers. This result is also consistent with the observed increase in activation energy related to the hopping of the species in the gate stack with the Hf content, extracted from the temperature acceleration of Vth shifts. It is also found that negative bias temperature instabilities are reduced in layers with Hf content of about 50 at. %. This “optimum” is tentatively attributed to the interplay between the slower transport of the hydrogen species and the larger density of interface and bulk defects in the gate stack when the Hf content increases.

Negative Bias Temperature Instability of HfN/HfO2 Gated P-Mosfets

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Investigation of an Anomalous Hump in Gate Current after Negative-Bias Temperature-Instability in Hfo2/Metal Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Fluorine IMP effect on negative bias temperature instability and process induced defects

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Experimental Investigation on the Instability for NiO/β-Ga2O3 Heterojunction-Gate FETs under Negative Bias Stress

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients