Abstract:In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage sweeping method. For SG devices, a concave-shaped VT evolution gradually occurs with the increase in temperature, and the concave peak appears faster with increasing reverse bias stress, followed by a corresponding convex-shaped VT recovery process. In contrast, the concave-shaped VT evolution for OG devices that occurred at room temperature gradually disappears in the opposite shifting direction with the increasing temperature, but the corresponding convex-shaped VT recovery process is not observed, substituted, instead, with a quick and monotonic recovery process to the initial state. To explain these interesting and different phenomena, we proposed physical mechanisms of time and temperature-dependent hole trapping, releasing, and transport, in terms of the discrepancies in barrier height and space charge region, at the metal/p-GaN junction between SG and OG HEMTs.

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps

Negative Bias Temperature Instability of HfN/HfO2 Gated P-Mosfets

Correlation of I<inf>d</inf>- and I<inf>g</inf>-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs

Investigation of an Anomalous Hump in Gate Current after Negative-Bias Temperature-Instability in Hfo2/Metal Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of Tan in Tan/Sio2 Gate Stack

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Trapping and Detrapping of Oxide Border Traps in Al2o3 Gate Dielectric in Mos2 N-Mosfets under Pbti Stress

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Fluorine IMP effect on negative bias temperature instability and process induced defects

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric