Abstract:In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD simulations and experimental characterizations. Surface/interface deep levels can be compensated by both shallow donor-like traps (SiNx passivation) and polarization charges (AlN passivation) at passivation/heterostructure interface, but with different levels of effectiveness under fast switching conditions. SiNx-passivation introduces shallow donor-like trap states with short time constant that favors a fast emission of trapped electrons in the access region and suppressed current collapse, but nevertheless exhibits more severe time-dependent recovery of dynamic on-resistance. For AlN passivation, interface traps are compensated by the fixed positive polarization charges and the off-state depletion region (in the 2DEG channel) is formed predominantly by electric-field effect, leading to an immediate accumulation of high channel electron concentration after switching the HEMT devices back to on-state and instant response of drain current to gate and drain bias. The field plate structure is necessary in SiNx-passivated devices for both current collapse suppression and electric field alleviation. With AlN passivation, the field plate can be solely designed for achieving more uniform electric field distribution for gate reliability concern without the concern of current collapse.

Evidence of Existence of Different Surface States in INP-Based High Electron Mobility Transistors (Hemts)

Investigation of Drain Current Transient in InP-based High Electron Mobility Transistors (Hemts)

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

PEALDInvestigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Investigation of Drain Current Transient in BCB- and SiN-passivated Al0.25Ga0.75As∕In0.2Ga0.8As Pseudomorphic High Electron Mobility Transistors

Identification of Trap States in P-Gan Layer of a P-Gan/algan/gan Power HEMT Structure by Deep-Level Transient Spectroscopy

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Gate-Voltage Independence of Electron Mobility in Power Algan/Gan Hemts

New Insights in the Passivation of High-K/inp Through Interface Characterization and Metal–oxide–semiconductor Field Effect Transistor Demonstration: Impact of Crystal Orientation

Static Surface States and Bulk Traps in AlGaN/GaN HEMT Including Hot Electron and Quantum Effects

Corrigendum: Analysis of Interface Trap States in InAlN/AlN/GaN Heterostructures (2014 Semicond. Sci. Technol. 29 095011)

Deep Level Investigation of INGAAS on INP Layer