Abstract:Detailed investigation of deep traps in HVPE-grown β-Ga2O3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from 200 K to 500 K on Pt/β-Ga2O3 and Ni/β-Ga2O3 Schottky diodes. Similar results were obtained with a fill pulse width of 100 milliseconds irrespective of different Schottky metal contacts and epilayers. Two electron traps at E2 (EC–ET =0.65 eV) and E3 (EC–ET =0.68 – 0.70 eV) with effective capture cross-sections of 4.10 × 10-14 cm2 and 5.75 × 10-15 cm2 above 300 K have been observed. Below 300 K, a deep trap with a negative DLTS signal peak was also observed at E1 (EC–ET = 0.34 – 0.35 eV) with very low capture cross-section of 3.28 × 10-17 cm2. For a short pulse width of 100 μs, only two electron traps E2 and E3 at energies of 0.72 eV, and = 0.73 eV were observed, and one order of higher corresponding effective capture cross-sections. All traps are found to be unaffected by the electric field during the field-dependence DLTS study. From the filling-pulse width dependence DLTS study, the decrease in capacitance transient amplitude with increasing pulse width has been observed opposite to the capture barrier kinetics of the traps and attributed to the emission of carriers during the capture process. Trap concentrations were found high at the interface from depth profiling DLTS. Based on the available literature, it is suggested that these traps are related to FeGa, Fe-related centers, and complexes with hydrogen or shallow donors and might be affected or generated during the metallization by the E-beam evaporator and the CMP polishing.

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach

Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Investigation of Traps in HVPE Grown β-Ga2O3 Epilayers/n+-Ga2O3 using Deep Level Transient Spectroscopy

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs