Abstract:In this article, the impact of the graded AlGaN back barrier and FeC co-doping buffer structure on the AlGaN GaN high electron mobility transistors (HEMTs) is proposed and systematically investigated. Due to effective suppression of Fe tail in unintentionally doped GaN (uid-GaN) layer by the insertion of the thick graded AlGaN back barrier layer, a large maximum drain current density and a transconductance peak are achieved. Meanwhile, the breakdown voltage is significantly improved by the use of FeC co-doping GaN buffer design. More importantly, it is revealed that the graded-AlGaN design can reduce the range and intensity of the electrical potential distribution in uid-GaN layer and then effectively suppress the acceptor-induced trappingdetrapping effect under high drain voltage. The RF small-signal performance of Fe-doped GaN (GaN:Fe)C co-doping buffer HEMT exhibits significant improvement. In addition, load-pull measurement at 8 GHz revealed that a saturation power increases from 38.04 to 41.07 dB, a power gain increases from 9.06 to 10.58 dB, and an associate power-added-efficiency (PAE) increased from 40.27% to 50.18%. Our proposed GaN-based epitaxial structure can not only suppress the gate lag by reduce AlGaN surface electric field, but it can also suppress the drain lag by reduce the amplitude and range of potential distribution. It indicates that our proposed device has great potential for future high-voltage RF power amplifier application.

Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Enhanced Breakdown Voltage and Dynamic Performance of GaN HEMTs with AlN/GaN Superlattice Buffer

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

High temperature and trap sates characterization of Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction

Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs with beta-Ga2O3 back barrier

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier