Abstract:Electrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) MIS structure. The GaN:C layers were grown with three different carbon doping concentrations (NC). A semi-vertical metal/semi-insulator/n-type semiconductor (MIS) device was fabricated to perform deep-level transient spectroscopy (DLTS) measurements. Two electron traps E1 and E2 with energy level at EC − (0.22–0.31) eV and EC − (0.45–0.49) eV were observed. E1 and E2 are associated with a nitrogen vacancy VN-related defect in the strain field of extended defects and a nitrogen antisite defect, respectively. By changing the reverse bias voltage of the DLTS measurement, the location and relative defect concentration of the E1 and E2 traps could be verified. A dominant electron trap E3 with an unusual capture cross section was only observed in devices with an NC = 2 × 1019 cm−3 GaN:C layer. This may charge carriers from a defect band and lead to the charge redistribution in the GaN:C layer when forward biased. A hole trap H1 with energy level at EV + 0.47 eV was found for the pulse bias in the forward ON-state. H1 is suggested to correspond with the CN induced 0/+ donor level. By analyzing the schematic band diagrams across the MIS structure, the carrier transport and defect charging mechanisms underlying the DLTS transient measurements are illustrated. The identification of the trap states in the carbon-doped GaN with different NC gives further understanding on the carbon doping impact on electric characteristics of GaN power devices made on Si substrates.

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Understanding the trap-induced frequency dispersion in the C-V curve of AlGaN/GaN Hetero-Structure

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Vertical Leakage Induced Current Degradation And Relevant Traps With Large Lattice Relaxation In Algan/Gan Heterostructures On Si

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Electronic Properties and Passivation Mechanism of AlGaN/GaN Heterojunction with Vacancies: a DFT Study